Introduction: Electron transport layer is considered as one of the important layers in the dye-sensitized solar cells as it is responsible for the transport of photo-generated electrons to the outer circuit. Selection of appropriate electron transport layer (ETL) is important for attaining higher power conversion efficiencies. Electron transfer can be enhanced effectively by improving the electrical conductivity of the photoanode material and there by recombination rate can be reduced.

Methods and Results: In this work, F doped SnO₂ (Fluorine doped Tin Oxide) nanostructures were synthesized by simple solvothermal method. The X-ray diffraction analysis of the sample showed characteristic peaks for rutile type SnO₂. The grain size was calculated using the Scherrer equation and it is found to be in the range of ~ 12 nm. Optical properties were studied using UV-visible absorption and photo luminescence (PL) analysis respectively. UV-VIS absorption analysis showed strong absorption in the UV region, and the PL result shows the decrease in peak intensity for F doped SnO₂ samples compared to the bare SnO₂ samples. From the TEM images nano flakes like morphology for the prepared samples were observed and the SAED pattern of the samples shows well defined ring pattern corresponding to the poly crystalline nature of the prepared samples. The prepared nanostructures were surface treated with TiCl₄ and they used as electron transport layer in dye-sensitized solar cells and the efficiency of the prepared solar cells were studied.